MRF406

更新时间： 2024-09-12 22:24:11

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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MRF406 数据手册

MRF406

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The MRF406 is Designed for

12.5 V 30 MHz Power Amplifier

Applications.

PACKAGE STYLE .380" 4L FLG

.112 x 45°

Ø.125 NOM.

FULL R

FEATURES INCLUDE:

• Common Emitter

• Output Power = 20 W ^(PEP)

.125

MAXIMUM RATINGS

4.0 A

20 V

I_C

V_CE

V_CB

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

40 V

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

80 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

2.2 ^OC/W

.004 / 0.10

.085 / 2.16

.160 / 4.06

T_STG

θ_JC

.240 / 6.10

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CES

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 1.0 mA

V_CE= 12.5 V

I_C= 1.0 A

4.0

BV_CBO

BV_CEO

BV_EBO

I_CES

5.0

---

h_FE

V_CE= 5.0 V

C_ob

V_CB= 12.5 V

V_CE= 12.5 V

f = 1.0 MHz

f = 30 MHz

200

P_out

G_PE

W(PEP)

V_CC= 12.5 V

I_cq= 25 mA

I_C≤ 1.75 A

P_out= 20 W (PEP)

f = 30, 30.001 MHz

IMD

-30

V_CC= 12.5 V

I_cq= 25 mA

P_out= 20 W (PEP)

f = 30, 30.001 MHz

>30:1 ALL PHASE ANGLES

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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