Datasheet > MRF19060LR3

MRF19060LR3

更新时间： 2024-11-14 04:39:07

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RF Power Field Effect Transistors

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MRF19060LR3 数据手册

Document Number: MRF19060

Rev. 9, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF19060LR3

MRF19060LSR3

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

applications.

• Typical CDMA Performance: 1960 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 7.5 Watts

1930-1990 MHz, 60 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 12.5 dB

Adjacent Channel Power —

885 kHz: -47 dBc @ 30 kHz BW

1.25 MHz: -55 dBc @ 12.5 kHz BW

2.25 MHz: -55 dBc @ 1 MHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465-06, STYLE 1

NI-780

MRF19060LR3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF19060LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

180

1.03

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.97

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

1 (Minimum)

M3 (Minimum)

MRF19060LR3 MRF19060LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7 8

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