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MRF19045R3 PDF预览

MRF19045R3

更新时间: 2024-01-03 13:55:28
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摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管射频局域网
页数 文件大小 规格书
12页 327K
描述
RF POWER FIELD EFFECT TRANSISTORS

MRF19045R3 数据手册

 浏览型号MRF19045R3的Datasheet PDF文件第2页浏览型号MRF19045R3的Datasheet PDF文件第3页浏览型号MRF19045R3的Datasheet PDF文件第4页浏览型号MRF19045R3的Datasheet PDF文件第5页浏览型号MRF19045R3的Datasheet PDF文件第6页浏览型号MRF19045R3的Datasheet PDF文件第7页 
ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MRF19045/D  
The RF MOSFET Line  
ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ  
N–Channel Enhancement–Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier  
applications.  
ꢒꢀ ꢁ ꢖꢗꢘꢙ ꢚꢀ ꢛ  
Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA  
Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 9.5 Watts Avg.  
1990 MHz, 45 W, 26 V  
LATERAL N–CHANNEL  
RF POWER MOSFETs  
Power Gain — 14.9 dB  
Efficiency — 23.5%  
Adjacent Channel Power —  
885 kHz: –50 dBc @ 30 kHz BW  
IM3 — –37 dBc  
100% Tested Under 2–Carrier N–CDMA  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
CASE 465E–03, STYLE 1  
NI–400  
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW  
Output Power  
MRF19045R3  
Excellent Thermal Stability  
Characterized with Series Equivalent Large–Signal Impedance Parameters  
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.  
CASE 465F–03, STYLE 1  
NI–400S  
MRF19045SR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
Gate–Source Voltage  
V
DSS  
V
GS  
–0.5, +15  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
105  
0.60  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
T
–65 to +200  
200  
°C  
°C  
stg  
T
J
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
2 (Minimum)  
M3 (Minimum)  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
1.65  
°C/W  
θ
JC  
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 3  
Motorola, Inc. 2002  

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