Datasheet > MRF19045R3

MRF19045R3

更新时间： 2024-11-13 22:15:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频局域网
页数	文件大小	规格书
12页	327K
描述
RF POWER FIELD EFFECT TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF19045R3 数据手册

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF19045/D

The RF MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

ꢒꢀ ꢁ ꢖꢗꢘꢙ ꢚꢀ ꢛ

ꢒ

ꢀ

ꢁ

ꢖ

ꢗ

ꢘ

ꢙ

ꢚ

ꢜ

ꢀ

ꢛ

• Typical CDMA Performance @ 1960 MHz, 26 Volts, I_DQ= 550 mA

Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9.5 Watts Avg.

1990 MHz, 45 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

Power Gain — 14.9 dB

Efficiency — 23.5%

Adjacent Channel Power —

885 kHz: –50 dBc @ 30 kHz BW

IM3 — –37 dBc

• 100% Tested Under 2–Carrier N–CDMA

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

CASE 465E–03, STYLE 1

NI–400

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW

Output Power

MRF19045R3

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F–03, STYLE 1

NI–400S

MRF19045SR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.65

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 3

MOTOROLA RF DEVICE DATA

MRF19045R3 MRF19045SR3

 Motorola, Inc. 2002

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF19045R3相关器件

型号	品牌	获取价格	描述	数据表
MRF19045SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060LR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
MRF19060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
MRF19060SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19085	MOTOROLA	获取价格	RF Power Field Effect Transistors

与MRF19045R3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF19045R3

MRF19045R3 数据手册

与MRF19045R3相关器件

与MRF19045R3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF19045R3

MRF19045R3 数据手册

与MRF19045R3相关器件

与MRF19045R3相关文章

您还可以找

您在本页遇到什么问题？