Datasheet > 晶体管 > 射频场效应晶体管> MRF19045LSR3

MRF19045LSR3

更新时间： 2024-11-13 21:54:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管
页数	文件大小	规格书
12页	569K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF19045LSR3 技术参数

生命周期：	Obsolete	包装说明：	FLATPACK, R-CDFP-F2
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.15	Is Samacsys：	N
Base Number Matches：	1

MRF19045LSR3 数据手册

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc.

Order this document

by MRF19045/D

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

MRF19045LR3

MRF19045LSR3

• Typical CDMA Performance @ 1960 MHz, 26 Volts, I_DQ= 550 mA

Multi-carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9.5 Watts Avg.

1990 MHz, 45 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 14.9 dB

Efficiency — 23.5%

Adjacent Channel Power —

885 kHz: -50 dBc @ 30 kHz BW

IM3 — -37 dBc

• 100% Tested Under 2-Carrier N-CDMA

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

CASE 465E-04, STYLE 1

NI-400

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW

Output Power

MRF19045LR3

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF19045LSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Value (1)

Unit

1.65

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Rev. 6

MOTOROLA RF DEVICE DATA

MRF19045LR3 MRF19045LSR3

 Motorola, Inc. 2004

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...12

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与MRF19045LSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF19045R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19045SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060LR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
MRF19060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060S	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
MRF19060SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS

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