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MRF19045LSR3 PDF预览

MRF19045LSR3

更新时间: 2024-02-08 10:19:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管功率场效应晶体管
页数 文件大小 规格书
12页 569K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF19045LSR3 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLATPACK, R-CDFP-F2针数:2
Reach Compliance Code:unknownECCN代码:5A991
HTS代码:8542.31.00.01风险等级:5.14
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-CDFP-F2
JESD-609代码:e4元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLATPACK
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):105 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:GOLD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF19045LSR3 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF19045/D  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier  
applications.  
MRF19045LR3  
MRF19045LSR3  
Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA  
Multi-carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13  
Output Power — 9.5 Watts Avg.  
1990 MHz, 45 W, 26 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Power Gain — 14.9 dB  
Efficiency — 23.5%  
Adjacent Channel Power —  
885 kHz: -50 dBc @ 30 kHz BW  
IM3 — -37 dBc  
100% Tested Under 2-Carrier N-CDMA  
Internally Matched, Controlled Q, for Ease of Use  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
CASE 465E-04, STYLE 1  
NI-400  
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW  
Output Power  
MRF19045LR3  
Excellent Thermal Stability  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Low Gold Plating Thickness on Leads, 40µ″ Nominal.  
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.  
CASE 465F-04, STYLE 1  
NI-400S  
MRF19045LSR3  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
-0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
105  
0.60  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +150  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value (1)  
Unit  
R
θ
JC  
1.65  
°C/W  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
Machine Model  
2 (Minimum)  
M3 (Minimum)  
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
Rev. 6  
Motorola, Inc. 2004  
For More Information On This Product,  
Go to: www.freescale.com  
 

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