Datasheet > MRF19045LR3_06

MRF19045LR3_06

更新时间： 2024-11-14 03:04:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	399K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF19045LR3_06 数据手册

Document Number: MRF19045

Rev. 8, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

MRF19045LR3

MRF19045LSR3

• Typical CDMA Performance @ 1960 MHz, 26 Volts, I_DQ= 550 mA

Multi-carrier IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9.5 Watts Avg.

1930-1990 MHz, 45 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 14.9 dB

Efficiency — 23.5%

Adjacent Channel Power —

885 kHz: -50 dBc @ 30 kHz BW

IM3 — -37 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

CASE 465E-04, STYLE 1

NI-400

MRF19045LR3

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

CASE 465F-04, STYLE 1

NI-400S

MRF19045LSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

105

0.60

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.65

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF19045LR3 MRF19045LSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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与MRF19045LR3_06相关器件

型号	品牌	获取价格	描述	数据表
MRF19045LR3_08	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LSR3	MOTOROLA	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045R3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19045SR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF19060	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060LR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF19060LR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
MRF19060LSR3	FREESCALE	获取价格	RF Power Field Effect Transistors

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