5秒后页面跳转
MRF175GU PDF预览

MRF175GU

更新时间: 2024-11-18 10:47:31
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管功率场效应晶体管局域网
页数 文件大小 规格书
1页 34K
描述
RF POWER FIELD-EFFECT TRANSISTOR

MRF175GU 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18Is Samacsys:N
外壳连接:SOURCE配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):26 A
最大漏极电流 (ID):26 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F5
元件数量:2端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

MRF175GU 数据手册

  
MRF175GU  
RF POWER FIELD-EFFECT TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE  
The ASI MRF175GU is a N-Channel  
Enhancement-Mode Push Pull  
MOSFET, Designed for FM, and TV  
Solid State Transmitter Applications up  
to 500 MHz.  
MAXIMUM RATINGS  
26 A  
ID  
65 V  
VDSS  
PDISS  
TJ  
400 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
0.44 OC/W  
TSTG  
θJC  
1 = DRAIN  
4 = GATE(2)  
2 = DRAIN(2)  
5 = SOURCE (1&2) -CASE  
3 = GATE(1)  
CHARACTERISTICS TC = 25 OC  
NONE  
SYMBOL  
V(BR)DSS  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
ID = 50 mA  
VGS = 0 V  
VGS = 0 V  
VGS = 20 V  
VDS = 10 V  
VGS = 10 V  
VDS = 10 V  
65  
V
mA  
µA  
IDSS  
IGSS  
V
DS = 28 V  
DS = 0 V  
2.5  
1.0  
6.0  
1.5  
V
VGS(th)  
VDS(on)  
gfs  
ID =100 mA  
ID = 5.0 A  
ID = 2.5 A  
1.0  
2.0  
3.0  
V
V
3.0  
mhos  
180  
200  
20  
Ciss  
Coss  
Crss  
pF  
VDS = 28 V  
VGS = 0 V  
f = 1.0 MHz  
Gps  
10  
50  
10:1  
12  
55  
---  
dB  
%
---  
VDD = 28 V  
IDQ = 2 X 100 mA  
POUT = 150 W  
f = 400 MHz  
η
ψ
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

与MRF175GU相关器件

型号 品牌 获取价格 描述 数据表
MRF175GU1111 TE

获取价格

N-CHANNEL MOS BROADBAND RF POWER FETs
MRF175GV ASI

获取价格

RF POWER FIELD-EFFECT TRANSISTOR
MRF175GV MOTOROLA

获取价格

N-CHANNEL MOS BROADBAND RF POWER FETs
MRF175GV TE

获取价格

N-CHANNEL MOS BROADBAND RF POWER FETs
MRF175GV MACOM

获取价格

The RF MOSFET Line 200/150W, 500MHz, 28V
MRF175LU MOTOROLA

获取价格

N-CHANNEL BROADBAND RF POWER FETs
MRF175LU TE

获取价格

N-CHANNEL BROADBAND RF POWER FETs
MRF175LU MACOM

获取价格

The RF MOSFET Line 100W, 400MHz, 28V
MRF175LV MOTOROLA

获取价格

N-CHANNEL BROADBAND RF POWER FETs
MRF175LV TE

获取价格

N-CHANNEL BROADBAND RF POWER FETs