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MRF173CQ PDF预览

MRF173CQ

更新时间: 2024-11-06 14:55:51
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
10页 675K
描述
The RF MOSFET Line 80W, 175MHz, 28V

MRF173CQ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CASE 316-01, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:4.65
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CXFM-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):220 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF173CQ 数据手册

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MRF173CQ  
The RF MOSFET Line  
80W, 175MHz, 28V  
Rev. V1  
Designed for broadband commercial and military applications up to  
200 MHz frequency range. The highpower, highgain and broadband  
performance of this device makes possible solid state transmitters for  
FM broadcast or TV channel frequency bands.  
Product Image  
NChannel enhancement mode MOSFET  
Guaranteed performance at 150 MHz, 28 V:  
Output power = 80 W  
Gain = 11 dB (13 dB typ.)  
Efficiency = 55% Min. (60% typ.)  
Low thermal resistance  
Ruggedness tested at rated output power  
Nitride passivated die for enhance  
ed reliability  
Low noise figure 1.5 dB typ. at 2.0 A, 150 MHz  
Excellent thermal stability; suited for Class A operation  
CASE 31601, STYLE 2  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

MRF173CQ 替代型号

型号 品牌 替代类型 描述 数据表
MRF174 MACOM

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MRF140 MACOM

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The RF MOSFET Line 30W, to 400MHz, 28V
MRF173 MACOM

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The RF MOSFET Line 80W, 175MHz, 28V

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