Datasheet > MRF1511T1

MRF1511T1

更新时间： 2024-01-30 03:07:01

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
页数	文件大小	规格书
12页	226K
描述
RF Power Field Effect Transistor

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技术参数
数据手册

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MRF1511T1 技术参数

生命周期：	Transferred	包装说明：	CHIP CARRIER, R-PQCC-N4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.13
Is Samacsys：	N	配置：	SINGLE
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	VERY HIGH FREQUENCY BAND
JESD-30 代码：	R-PQCC-N4	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	QUAD
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF1511T1 数据手册

MRF1511

Rev. 3, 3/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N−Channel Enhancement−Mode Lateral MOSFET

MRF1511NT1

MRF1511T1

Designed for broadband commercial and industrial applications at frequen-

cies to 175 MHz. The high gain and broadband performance of this device

makes it ideal for large−signal, common source amplifier applications in 7.5 volt

portable FM equipment.

ꢁ

• Specified Performance @ 175 MHz, 7.5 Volts

Output Power — 8 Watts

Power Gain — 11.5 dB

Efficiency — 55%

175 MHz, 8 W, 7.5 V

LATERAL N−CHANNEL

BROADBAND

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,

175 MHz, 2 dB Overdrive

RF POWER MOSFET

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal

ꢀ

Impedance Parameters

• Broadband UHF/VHF Demonstration Amplifier Information

Available Upon Request

• RF Power Plastic Surface Mount Package

ꢂ

• N Suffix Indicates Lead−Free Terminations

• Available in Tape and Reel.

CASE 466−03, STYLE 1

PLD−1.5

T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

−0.5, +40

±20

Unit

Vdc

Adc

Drain−Source Voltage

Gate−Source Voltage

DSS

Drain Current — Continuous

(1)

Total Device Dissipation @ T = 25°C

Derate above 25°C

62.5

0.5

W/°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

−65 to +150

°C

stg

150

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Table 3. Moisture Sensitivity Level

Test Methodology

°C/W

Rating

Package Peak Temperature

Unit

Per JESD 22−A113, IPC/JEDEC J−STD−020

260

°C

J –

1. Calculated based on the formula P

θJC

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF1511NT1 MRF1511T1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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