Document Number: MRF1511N
Rev. 7, 6/2008
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 7.5 volt
portable FM equipment.
MRF1511NT1
D
• Specified Performance @ 175 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 13 dB
Efficiency — 70%
175 MHz, 8 W, 7.5 V
LATERAL N-CHANNEL
BROADBAND
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
RF POWER MOSFET
Features
• Excellent Thermal Stability
G
• Characterized with Series Equivalent Large-Signal
Impedance Parameters
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
S
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +40
20
Unit
Vdc
Vdc
Adc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GS
Drain Current — Continuous
I
4
D
(1)
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
62.5
0.5
W
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
T
- 65 to +150
150
°C
°C
stg
T
J
(2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
R
2
°C/W
θ
JC
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
T
T
C
J –
1. Calculated based on the formula P
=
D
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF1511NT1
RF Device Data
Freescale Semiconductor
1