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by MRF15030/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
•
Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP)
•
•
Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
V
= 24 Vdc, I = 2.5 Adc
CE
C
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
•
•
•
Characterized with Small Signal S–Parameters from 1000–2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
•
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
25
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
V
60
CES
EBO
V
4
Collector–Current — Continuous
I
C
10
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
125
0.71
Watts
W/°C
C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
Symbol
Max
Unit
R
1.40
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, I = 0)
V
25
60
30
29
64
52
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, V = 0)
V
(BR)CES
(BR)CER
C
BE
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, R = 100 Ω)
V
Vdc
C
BE
(continued)
REV 7
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF15030
1