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MRF1500 PDF预览

MRF1500

更新时间: 2024-09-24 22:45:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管微波局域网
页数 文件大小 规格书
4页 107K
描述
MICROWAVE POWER TRANSISTOR

MRF1500 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknown风险等级:5.13
外壳连接:BASE最大集电极电流 (IC):35 A
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):1700 W
最小功率增益 (Gp):5.2 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF1500 数据手册

 浏览型号MRF1500的Datasheet PDF文件第2页浏览型号MRF1500的Datasheet PDF文件第3页浏览型号MRF1500的Datasheet PDF文件第4页 
Order this document  
by MRF1500/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Motorola Preferred Device  
Designed for 1025–1150 MHz pulse common base amplifier applications  
such as DME.  
Guaranteed Performance @ 1090 MHz  
Output Power = 500 Watts Peak  
Gain = 5.2 dB Min  
500 W (PEAK), 10251150 MHz  
MICROWAVE POWER  
TRANSISTOR  
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR  
Hermetically Sealed Industry Package  
NPN SILICON  
Silicon Nitride Passivated  
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal  
Migration  
Internal Input Matching  
Characterized with 10 µs, 1.0% Duty Cycle Pulses  
CASE 355E–01, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
Vdc  
Vdc  
Vdc  
Adc  
CES  
CBO  
EBO  
V
V
65  
3.5  
35  
Collector Current — Peak (1)  
I
C
Total Device Dissipation @ T = 25°C (1), (2)  
Derate above 25°C  
P
D
1750  
10  
Watts  
W/°C  
C
Storage Temperature Range  
Junction Temperature  
T
65 to +200  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case (3)  
R
0.1  
°C/W  
θJC  
NOTES:  
1. Under pulse RF operating conditions.  
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF  
amplifiers.  
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ  
measured @32 µs, 2.0%)  
value  
JC  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 6  
Motorola, Inc. 1994  

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