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MRF148A PDF预览

MRF148A

更新时间: 2024-01-12 21:50:37
品牌 Logo 应用领域
ASI 晶体晶体管放大器局域网
页数 文件大小 规格书
1页 39K
描述
N-Channel Enhancement Mode VHF POWER MOSFET

MRF148A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CASE 211-07, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.71
配置:SINGLE最小漏源击穿电压:120 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):115 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:FLAT端子位置:RADIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

MRF148A 数据手册

  
MRF148A  
VHF POWER MOSFET  
N-Channel Enhancement Mode  
DESCRIPTION:  
The ASI MRF148A is Designed for  
General Purpose Class B Power  
Amplifier Applications up to 175 MHz.  
PACKAGE STYLE .380 4L FLG  
.112 x 45°  
FEATURES:  
B
A
Ø.125 NOM.  
FULL R  
S
D
S
PG = 15 dB Typ. at 30 W /175 MHz  
ηD = 50% Typ. at 30 W /30 MHz  
Omnigold™ Metalization System  
J
.125  
G
C
D
E
F
MAXIMUM RATINGS  
I
H
G
ID  
6.0 A  
120 V  
VDSS  
VDGO  
VGS  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
120 V  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
± 40 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
115 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.52 °C/W  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
TSTG  
θJC  
.240 / 6.10  
J
CHARACTERISTICS TC = 25 °C  
SYMBOL  
V(BR)DSS  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
VGS = 0 V  
VGS = 0 V  
VGS = 20 V  
VDS = 10 V  
VGS = 10 V  
VDS = 10 V  
IDS = 10 mA  
VDS = 50 V  
VDS = 0 V  
ID = 10 mA  
ID = 2.5 A  
ID = 2.5 A  
125  
---  
---  
---  
---  
---  
1.0  
100  
5.0  
5.0  
---  
V
mA  
nA  
V
IDSS  
IGSS  
---  
---  
VGS(th)  
VDS(on)  
GFS  
1.0  
1.0  
800  
V
---  
mS  
62  
35  
3.0  
Ciss  
Coss  
Crss  
pF  
VDS = 50 V  
VGS = 0 V  
f = 1.0 MHz  
VDD = 50 V  
f = 30 MHz  
IDQ = 100 mA  
POUT = 30 W  
18  
40  
PG  
dB  
%
ηD  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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