Datasheet > MRF148

MRF148

更新时间： 2024-11-17 22:45:59

品牌	Logo	应用领域
泰科 - TE		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	171K
描述
N-CHANNEL MOS LINEAR RF POWER FET

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数据手册

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MRF148 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by MRF148/D

The RF MOSFET Line

N–Channel Enhancement–Mode

Designed for power amplifier applications in industrial, commercial and

amateur radio equipment to 175 MHz.

•

Superior High Order IMD

Specified 50 Volts, 30 MHz Characteristics

Output Power = 30 Watts

Power Gain = 18 dB (Typ)

30 W, to 175 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

Efficiency = 40% (Typ)

•

IMD (30 W PEP) — –35 dB (Typ)

(d3)

IMD

(30 W PEP) — –60 dB (Typ)

(d11)

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

•

Lower Reverse Transfer Capacitance (3.0 pF Typical)

CASE 211–07, STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Value

120

±40

6.0

Unit

Vdc

Adc

Drain–Source Voltage

Drain–Gate Voltage

DSS

DGO

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

115

0.66

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

–65 to +150

200

°C

stg

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

1.52

°C/W

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Replaces MRF148/D

12 3 4 5 6

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