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MRF141 PDF预览

MRF141

更新时间: 2024-02-08 07:11:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
8页 164K
描述
N-CHANNEL BROADBAND RF POWER MOSFET

MRF141 技术参数

是否Rohs认证: 符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.32
Is Samacsys:N外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
最大漏极电流 (ID):32 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF141 数据手册

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Order this document  
by MRF141/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
N–Channel Enhancement–Mode MOSFET  
Designed for broadband commercial and military applications at frequencies  
to 175 MHz. The high power, high gain and broadband performance of this  
device makes possible solid state transmitters for FM broadcast or TV channel  
frequency bands.  
Guaranteed Performance at 30 MHz, 28 V:  
Output Power — 150 W  
Gain — 18 dB (22 dB Typ)  
Efficiency — 40%  
150 W, 28 V, 175 MHz  
N–CHANNEL  
BROADBAND  
RF POWER MOSFET  
Typical Performance at 175 MHz, 50 V:  
Output Power — 150 W  
Gain — 13 dB  
Low Thermal Resistance  
Ruggedness Tested at Rated Output Power  
Nitride Passivated Die for Enhanced Reliability  
D
G
CASE 211–11, STYLE 2  
S
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–Source Voltage  
Drain–Gate Voltage  
V
DSS  
V
DGO  
65  
Gate–Source Voltage  
Drain Current — Continuous  
V
GS  
±40  
16  
I
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
300  
1.71  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
T
65 to +150  
200  
°C  
°C  
stg  
T
J
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.6  
°C/W  
θJC  
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 8  
Motorola, Inc. 1997  

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