Datasheet > MRF13750HSR5

MRF13750HSR5

更新时间： 2024-11-18 21:14:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	504K
描述
RF Power Bipolar Transistor

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技术参数
数据手册

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MRF13750HSR5 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.57
峰值回流温度（摄氏度）：	260	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

MRF13750HSR5 数据手册

Document Number: MRF13750H

Rev. 1, 01/2018

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

MRF13750H

MRF13750HS

N--Channel Enhancement--Mode Lateral MOSFETs

These 750 W CW transistors are designed for industrial, scientific and

medical (ISM) applications in the 700 to 1300 MHz frequency range. The

transistors are capable of CW or pulse power in narrowband operation.

Typical Performance: V = 50 Vdc

700–1300 MHz, 750 W CW, 50 V

RF POWER LDMOS TRANSISTORS

Frequency

(MHz)



out

Signal Type

(W)

750

850

(dB)

19.3

20.5

(%)

67.1

69.2

(1)

915

(2)

915

Pulse

(100 sec, 10% Duty Cycle)

(3)

1300

700

17.2

56.0

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

NI--1230H--4S

MRF13750H

Signal Type

VSWR

(MHz)

Result

(2)

915

Pulse

> 10:1 at all 15.9 Peak

No Device

(100 sec, 10%

Duty Cycle)

Phase

Angles

(3 dB

Overdrive)

Degradation

1. Measured in 915 MHz narrowband reference circuit (page 5).

2. Measured in 915 MHz narrowband production test fixture (page 11).

3. Measured in 1300 MHz narrowband reference circuit (page 8).

NI--1230S--4S

MRF13750HS

Features



Internally input pre--matched for ease of use

Device can be used single--ended or in a push--pull configuration

Characterized for 30 to 50 V

Suitable for linear applications with appropriate biasing

Integrated ESD protection

Recommended driver: MRFE6VS25GN (25 W)

Gate A

Gate B

Drain A

Drain B

Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Typical Applications



915 MHz industrial heating/welding systems

1300 MHz particle accelerators

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

 2017–2018 NXP B.V.

MRF13750H MRF13750HS

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...19

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