Document Number: MRF13750H
Rev. 1, 01/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
MRF13750H
MRF13750HS
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and
medical (ISM) applications in the 700 to 1300 MHz frequency range. The
transistors are capable of CW or pulse power in narrowband operation.
Typical Performance: V = 50 Vdc
DD
700–1300 MHz, 750 W CW, 50 V
RF POWER LDMOS TRANSISTORS
Frequency
(MHz)
P
G
D
out
ps
Signal Type
(W)
750
850
(dB)
19.3
20.5
(%)
67.1
69.2
(1)
915
CW
(2)
915
Pulse
(100 sec, 10% Duty Cycle)
(3)
1300
CW
700
17.2
56.0
Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
NI--1230H--4S
MRF13750H
Signal Type
VSWR
(MHz)
Result
(2)
915
Pulse
> 10:1 at all 15.9 Peak
50
No Device
(100 sec, 10%
Duty Cycle)
Phase
Angles
(3 dB
Overdrive)
Degradation
1. Measured in 915 MHz narrowband reference circuit (page 5).
2. Measured in 915 MHz narrowband production test fixture (page 11).
3. Measured in 1300 MHz narrowband reference circuit (page 8).
NI--1230S--4S
MRF13750HS
Features
Internally input pre--matched for ease of use
Device can be used single--ended or in a push--pull configuration
Characterized for 30 to 50 V
Suitable for linear applications with appropriate biasing
Integrated ESD protection
Recommended driver: MRFE6VS25GN (25 W)
Gate A
Gate B
Drain A
Drain B
3
4
1
2
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
915 MHz industrial heating/welding systems
1300 MHz particle accelerators
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2018 NXP B.V.
MRF13750H MRF13750HS
RF Device Data
NXP Semiconductors
1