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MRF136 PDF预览

MRF136

更新时间: 2024-01-16 11:39:04
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页数 文件大小 规格书
12页 287K
描述
N-CHANNEL MOS BROADBAND RF POWER FETs

MRF136 技术参数

是否Rohs认证: 符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.21
Is Samacsys:N外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
最大漏极电流 (ID):5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF136 数据手册

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Order this document  
by MRF136/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF MOSFET Line  
. . . designed for wideband large–signal amplifier and oscillator applications up  
to 400 MHz range, in either single ended or push–pull configuration.  
Guaranteed 28 Volt, 150 MHz Performance  
15 W, 30 W, to 400 MHz  
MRF136  
MRF136Y  
N–CHANNEL  
MOS BROADBAND  
RF POWER FETs  
Output Power = 15 Watts  
Narrowband Gain = 16 dB (Typ)  
Efficiency = 60% (Typical)  
Output Power = 30 Watts  
Broadband Gain = 14 dB (Typ)  
Efficiency = 54% (Typical)  
Small–Signal and Large–Signal  
Characterization  
100% Tested For Load  
Mismatch At All Phase  
Angles With 30:1 VSWR  
D
MRF136  
Space Saving Package For  
Push–Pull Circuit  
Applications — MRF136Y  
CASE 211–07, STYLE 2  
MRF136  
Excellent Thermal Stability,  
Ideally Suited For Class A  
Operation  
G
S
Facilitates Manual Gain  
Control, ALC and  
Modulation Techniques  
D
MRF136Y  
G
G
S
(FLANGE)  
CASE 319B–02, STYLE 1  
MRF136Y  
D
MAXIMUM RATINGS  
Value  
Rating  
Symbol  
Unit  
MRF136  
MRF136Y  
Drain–Source Voltage  
Drain–Gate Voltage (R  
Gate–Source Voltage  
V
65  
65  
65  
65  
Vdc  
Vdc  
Vdc  
Adc  
DSS  
= 1.0 M)  
V
DGR  
GS  
V
±40  
GS  
Drain Current — Continuous  
I
D
2.5  
5.0  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
55  
0.314  
100  
0.571  
Watts  
W/°C  
C
Storage Temperature Range  
Operating Junction Temperature  
THERMAL CHARACTERISTICS  
T
65 to +150  
°C  
°C  
stg  
T
200  
J
Max  
Characteristic  
Symbol  
Unit  
MRF136  
MRF136Y  
1.75  
Thermal Resistance, Junction to Case  
R
3.2  
°C/W  
θJC  
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 6  
Motorola, Inc. 1994  

MRF136 替代型号

型号 品牌 替代类型 描述 数据表
MRF137 MACOM

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The RF MOSFET Line 30W, to 400MHz, 28V
MRF171A MACOM

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The RF MOSFET Line 45W, 150MHz, 28V
MRF136 MACOM

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The RF MOSFET Line 15W, to 400MHz, 28V

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