Datasheet > MQSMAJ4489

MQSMAJ4489

更新时间： 2024-11-29 08:25:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试光电二极管
页数	文件大小	规格书
2页	157K
描述
Zener Diode, 100V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MQSMAJ4489 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-214BA	包装说明：	R-PDSO-C2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.92	其他特性：	HIGH RELIABILITY, METALLURGICALLY BONDED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-214BA
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.5 W
认证状态：	Not Qualified	标称参考电压：	100 V
表面贴装：	YES	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	5%	工作测试电流：	2.5 mA

MQSMAJ4489 数据手册

SMAJ4460 thru SMAJ4496, e3

and SMAJ6485 thru SMAJ6491, e3

1.5 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

SURFACE MOUNT

DESCRIPTION

ZENER

This 1.5 watt zener series in a low-profile light-weight plastic surface mount

configuration, with stress-relief J-bend contacts, meets or exceeds the electrical

performance of the 1N4460 thru 1N4496 and 1N6485 thru 1N6491. It also provides

double the overall surge performance by using a larger active die element. This

includes ESD protection per IEC61000-4-2, EFT protection per IEC61000-4-4, and

higher surge levels defined herein. The low-flat profile provides easier insertion or

automatic handling compared to other MELF style packages. Its thermally efficient

design lowers junction temperatures and extends operating temperature range

before derating begins. Power derates to zero at 150°C for these plastic packages.

DO-214BA or AC

(SMAJ)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener voltages: 3.3 volts to 200 volts

Metallurgically bonded

• For high reliability voltage regulation in low profile

surface mount locations requiring easy

placement and strain relief

• Light weight for airborne or satellite applications

• Superior surge quality to protect from ESD and

EFT transients per IEC61000-4-2 and -4-4 and

higher surge levels defined herein

Reliability data per JESD22-A108, JESD22-A104,

JESD22-A113-B, JESD22-A101-B, and JESD22-A102

Thermally efficient surface mount with J-bends for

stress relief (flat handling surface for easier placement)

Options for screening in accordance with MIL-PRF-

19500/406 for JAN, JANTX, and JANTXV are available

by adding MQ, MX, or MV prefixes respectively to part

numbers. For example, designate a MXSMAJ4460 for a

JANTX screen.

•

MECHANICAL AND PACKAGING

• Molded epoxy package meets UL94V-0

• Terminals: Tin-lead or RoHS compliant annealed

matte-Tin plated solderable per MIL-STD-750,

method 2026

• Body marked with P/N without SMAJ letters

(ie. 4460, 4496, 6485, 4460, etc.)

• Polarity is indicated by cathode band

• Weight: 0.064 grams (approximate)

• Tape & Reel packaging per EIA-481-2 with 12

mm tape and 2500 units per reel (13 inch reel)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

•

Operating temperature: -55°C to +150°C

Storage temperature: -55°C to +150°C

1.5 watt steady-state maximum power

Thermal resistance, R_θJL= 15 °C/W

Solder Temperatures: 260ºC for 10 s (maximum)

POWER DERATING – OUTLINE – MOUNTING PAD

DIMENSIONS

MILLIMETERS

INCHES

DIM

MIN

.052

.160

.100

.194

.078

.030

MAX

.103

.180

.110

.216

.115

.060

.005

MIN

1.32

4.06

2.54

4.93

1.98

0.76

MAX

2.62

4.57

2.79

5.49

2.92

1.52

0.13

2.5

2.0

1.5

1.0

DIMENSION A IS WITHIN DO-214BA BUT HIGHER THAN

STANDARD JEDEC OUTLINES..DIMENSION B IS WIDER

THAN BOTH JEDEC OUTLINES FOR LOWER THERMAL

RESISTANCE

0.5

Outline

25 50 75 100 125 150 175 200

T_L, Lead Temperature (ºC) 3/8” from body

Figure 1. Power Derating Curve

Mounting Pad

6-20-07 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

下载PDF

与MQSMAJ4489相关器件

型号	品牌	获取价格	描述	数据表
MQSMAJ4489CE3	MICROSEMI	获取价格	Zener Diode, 100V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ4489DE3	MICROSEMI	获取价格	Zener Diode, 100V V(Z), 1%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ4489E3	MICROSEMI	获取价格	Zener Diode, 100V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ4490	MICROSEMI	获取价格	Zener Diode, 110V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN
MQSMAJ4490C	MICROSEMI	获取价格	Zener Diode, 110V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN
MQSMAJ4490CE3	MICROSEMI	获取价格	Zener Diode, 110V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ4490D	MICROSEMI	获取价格	Zener Diode, 110V V(Z), 1%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN
MQSMAJ4490DE3	MICROSEMI	获取价格	Zener Diode, 110V V(Z), 1%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ4490E3	MICROSEMI	获取价格	Zener Diode, 110V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ4491	MICROSEMI	获取价格	Zener Diode, 120V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN

与MQSMAJ4489相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

37
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

MQSMAJ4489

MQSMAJ4489 技术参数

MQSMAJ4489 数据手册

与MQSMAJ4489相关器件

与MQSMAJ4489相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MQSMAJ4489

MQSMAJ4489 技术参数

MQSMAJ4489 数据手册

与MQSMAJ4489相关器件

与MQSMAJ4489相关文章

您还可以找

您在本页遇到什么问题？