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MPX5010GVS PDF预览

MPX5010GVS

更新时间: 2024-11-10 22:07:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 传感器压力传感器输出元件
页数 文件大小 规格书
10页 194K
描述
INTEGRATED PRESSURE SENSOR 0 to 10 kPa (0 to 1.45 psi) 0.2 to 4.7 V OUTPUT

MPX5010GVS 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.81最大精度 (%):5%
其他特性:TEMPERATURE COMPENSATED, SIGNAL CONDITIONED主体宽度:20.31 mm
主体长度或直径:17.9 mm外壳:PLASTIC
线性度 (%):5 %安装特点:THROUGH HOLE MOUNT
标称偏移:0.20V最大工作电流:10 mA
最高工作温度:125 °C最低工作温度:-40 °C
输出范围:0.20-4.70V输出类型:ANALOG VOLTAGE
封装形状/形式:ROUND端口类型:BARBED
最大压力范围:1.45 Psi最小压力范围:
压力传感模式:GAGE响应时间:1000 µs
灵敏度(mV / V):450 mV/V传感器/换能器类型:PRESSURE SENSOR,PEIZORESISTIVE
最大供电电压:5.25 V最小供电电压:4.75 V
表面贴装:NO端接类型:SOLDER
Base Number Matches:1

MPX5010GVS 数据手册

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Order this document  
by MPX5010/D  
SEMICONDUCTOR TECHNICAL DATA  
INTEGRATED  
PRESSURE SENSOR  
0 to 10 kPa (0 to 1.45 psi)  
0.2 to 4.7 V OUTPUT  
The MPX5010 series piezoresistive transducer is a state–of–the–art monolithic silicon  
pressure sensor designed for a wide range of applications, but particularly those  
employing a microcontroller or microprocessor with A/D inputs. This patented, single  
element transducer combines advanced micromachining techniques, thin–film metalliza-  
tion, and bipolar processing to provide an accurate, high level analog output signal that  
is proportional to the applied pressure.  
Features  
5.0% Maximum Error over 0° to 85°C  
Ideally Suited for Microprocessor or Microcontroller–Based Systems  
Patented Silicon Shear Stress Strain Gauge  
Durable Epoxy Unibody Element  
BASIC CHIP  
CARRIER ELEMENT  
CASE 867–08, STYLE 1  
Temperature Compensated over 40° to +125°C  
V
S
3
THIN FILM  
TEMPERATURE  
COMPENSATION  
AND  
GAIN STAGE #2  
AND  
GROUND  
REFERENCE  
SHIFT CIRCUITRY  
X–ducer  
SENSING  
ELEMENT  
1
V
out  
DIFFERENTIAL  
PORT OPTION  
GAIN STAGE #1  
CASE 867C–05, STYLE 1  
2
PINS 4, 5 AND 6 ARE NO CONNECTS  
GND  
PIN NUMBER  
1
2
3
V
4
5
6
N/C  
N/C  
N/C  
Figure 1. Fully Integrated Pressure Sensor Schematic  
out  
Gnd  
V
S
(1)  
MAXIMUM RATINGS  
NOTE: Pins 4, 5, and 6 are internal  
device connections. Do not connect  
to external circuitry or ground. Pin 1  
is noted by the notch in the Lead.  
Parametrics  
Overpressure (P1 > P2)  
Symbol  
Value  
75  
Unit  
kPa  
kPa  
°C  
(2)  
P
max  
(2)  
Burst Pressure (P1 > P2)  
P
burst  
100  
Storage Temperature  
Operating Temperature  
T
stg  
40 to +125  
40 to +125  
T
A
°C  
1. T = 25°C unless otherwise noted.  
C
2. Exposure beyond the specified limits may cause permanent damage or degradation to the device.  
Senseon and X–ducer are trademarks of Motorola, Inc.  
REV 2  
Motorola, Inc. 1997  

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