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MPSH34

更新时间： 2024-11-18 22:26:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管
页数 文件大小 规格书
3页 28K
描述
NPN General Purpose Amplifier

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中文翻译

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MPSH34 数据手册

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MPSH34  
NPN General Purpose Amplifier  
•
This device is designed for common-emitter low noise  
amplifier and mixer applications with collector currents  
in the 100mA to 20mA range to 300MHz, and low  
frequency drift common-base VHF oscillator  
applications with high output levels for driving FET  
mixers.  
TO-92  
1. Base 2. Emitter 3. Collector  
•
•
Sourced from process 47.  
See MPSH11 for characteristics.  
1
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector current  
40  
40  
CEO  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
50  
mA  
°C  
C
T , T  
Junction and Storage Temperature  
-55 ~ +150  
J
stg  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Sustaining Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 1.0mA, I = 0  
40  
40  
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 100µA, I = 0  
E
= 10µA, I = 0  
4.0  
VV  
nA  
C
I
V
= 30V, I = 0  
50  
CB  
E
On Characteristics  
h
DC Current Gain  
V
V
= 2.0V, I = 20mA  
15  
40  
FE  
CE  
CE  
C
= 15V, I = 7.0mA  
C
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
= 7.0mA, I = 2.0mA  
0.5  
V
V
CE(sat)  
C
B
V
= 15V, I = 7.0mA  
0.95  
BE(on)  
CE  
C
Small Signal Characteristics  
f
Current Gain Bandwidth Product  
I
=15mA, V = 15V,  
500  
MHz  
pF  
T
C
CE  
f = 100MHz  
C
Collector-Base Capacitance  
V
= 10V, I = 0, f = 1.0MHz  
0.32  
cb  
CB  
E
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
mW  
mW/°C  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
θJC  
θJA  
°C/W  
©2003 Fairchild Semiconductor Corporation  
Rev. A, September 2003  
123

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MPSH34 替代型号

型号 品牌 替代类型 描述 数据表
MPSH81_D26Z FAIRCHILD

类似代替

 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
MPSH81 FAIRCHILD

功能相似

 PNP RF Transistor

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 		Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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MPSH34/D10Z{OPTION18} TI

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 		100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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 		100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSH34/D11Z TI

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 		TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSH34/D11Z{OPTION18} TI

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 		TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSH34/D11Z{OPTION5} TI

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 		TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSH34/D26Z TI

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 		100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSH34/D26Z(OPTION18) TI

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 		Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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