5秒后页面跳转
MPSA64RLRAG PDF预览

MPSA64RLRAG

更新时间: 2024-09-23 04:39:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 63K
描述
Darlington Transistors PNP Silicon

MPSA64RLRAG 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.29最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):20000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHz

MPSA64RLRAG 数据手册

 浏览型号MPSA64RLRAG的Datasheet PDF文件第2页浏览型号MPSA64RLRAG的Datasheet PDF文件第3页浏览型号MPSA64RLRAG的Datasheet PDF文件第4页 
MPSA62, MPSA63, MPSA64  
MPSA64 is a Preferred Device  
Darlington Transistors  
PNP Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
COLLECTOR 3  
BASE  
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
Vdc  
CES  
CBO  
EBO  
MPSA62  
−20  
−30  
MPSA63/64  
EMITTER 1  
CollectorBase Voltage  
V
V
Vdc  
MPSA62  
−20  
−30  
MPSA63/64  
MARKING DIAGRAM  
EmitterBase Voltage  
−10  
Vdc  
Collector Current − Continuous  
Total Device Dissipation  
I
−500  
mAdc  
C
P
P
MPS  
A6x  
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
AYWWG  
TO−92  
G
(TO−226AA)  
CASE 29−11  
STYLE 1  
Total Device Dissipation  
1
@ T = 25°C  
1.5  
12  
W
mW/°C  
C
2
3
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
x
A
Y
= 2, 3, or 4  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
WW  
G
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
200  
°C/W  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 2  
MPSA62/D  

MPSA64RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
BC33725BU ONSEMI

类似代替

NPN Bipolar Transistor
BC33725TA ONSEMI

功能相似

NPN Bipolar Transistor
BC337-40 DIOTEC

功能相似

Si-Epitaxial PlanarTransistors

与MPSA64RLRAG相关器件

型号 品牌 获取价格 描述 数据表
MPSA64RLRM ONSEMI

获取价格

Darlington Transistors PNP Silicon
MPSA64RLRMG ONSEMI

获取价格

Darlington Transistors PNP Silicon
MPSA64RLRP MOTOROLA

获取价格

500mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA64-S00Z FAIRCHILD

获取价格

Transistor
MPSA64T/R NXP

获取价格

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 P
MPSA64T/R PHILIPS

获取价格

Transistor
MPSA64-T/R NXP

获取价格

500mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS-A64T93 ROHM

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPSA64TPE2 TOSHIBA

获取价格

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
MPSA64TPER1 TOSHIBA

获取价格

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal