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MPSA62 PDF预览

MPSA62

更新时间: 2024-11-03 22:51:11
品牌 Logo 应用领域
KEC 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
2页 69K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR)

MPSA62 数据手册

 浏览型号MPSA62的Datasheet PDF文件第2页 
SEMICONDUCTOR  
MPSA62/63/64  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
DARLINGTON TRANSISTOR.  
B
C
FEATURES  
Complementary to MPSA13/14.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
1.00  
1.27  
E
K
D
G
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VCBO  
RATING  
-20  
UNIT  
V
F
G
H
J
K
L
0.85  
MPSA62  
Collector-Base  
Voltage  
0.45  
_
H
14.00 +0.50  
MPSA63/64  
MPSA62  
-30  
0.55 MAX  
2.30  
0.45 MAX  
1.00  
F
F
-20  
M
Collector-Emitter  
Voltage  
VCES  
V
N
3
1
2
MPSA63/64  
-30  
1. EMITTER  
2. BASE  
3. COLLECTOR  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
-10  
V
mA  
mW  
-500  
625  
PC  
Collector Power Dissipation  
Junction Temperature  
Tj  
TO-92  
150  
Tstg  
Storage Temperature Range  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC SYMBOL  
TEST CONDITION  
MIN.  
-20  
TYP.  
MAX.  
UNIT  
MPSA62  
-
-
-
-
Collector-Emitter  
Breakdown Voltage  
V(BR)CES  
IC=-0.1mA, IB=0  
V
MPSA63/64  
MPSA62  
-30  
VCB=-15V, IE=0  
VCB=-30V, IE=0  
VEB=-10V, IC=0  
Collector Cut-off  
Current  
ICBO  
IEBO  
-
-
-0.1  
A  
A  
MPSA63/64  
Emitter Cut-off Current  
-
-
-
-
-
-
-
-
-
-
-
-0.1  
MPSA62  
MPSA63  
MPSA64  
MPSA63  
MPSA64  
MPSA62  
MPSA63/64  
MPSA62  
MPSA63/64  
20,000  
-
-
IC=-10mA, VCE=-5V  
5,000  
hFE  
DC Current Gain  
10,000  
-
10,000  
-
IC=-100mA, VCE=-5V  
20,000  
-
IC=-10mA, IB=-0.01mA  
IC=-100mA, IB=-0.1mA  
IC=-10mA, VCE=-5V  
IC=-100mA, VCE=-5V  
-
-
-
-
-1.0  
-1.5  
-1.4  
-2.0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
V
VBE  
Base Emitter Voltage  
V
Current Gain  
Bandwith Product  
fT  
IC=-10mA, f=100MHz, VCE=-5V  
MPSA63/64  
125  
-
-
MHz  
*Pulse Test : Pulse Width300S, Duty Cycle2%  
1999. 11. 30  
Revision No : 3  
1/2  

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