Datasheet > MPSA56J61Z

MPSA56J61Z

更新时间： 2024-11-05 08:18:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
15页	1073K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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MPSA56J61Z 数据手册

February 2006

MPSA56/MMBTA56/PZTA56

PNP General Purpose Ampliﬁer

Description

This device is designed for general purpose ampliﬁer

applications at collector currents to 300mA. Sourced

from Process 73

Absolute Maximum Ratings*

T = 25°C unless otherwise speciﬁed.

Parameter

Collector-Emitter Voltage

Symbol

Value

-80

Unit

CES

CBO

EBO

Collector-Base Voltage

-80

Emitter-Base Voltage

-4.0

Collector Current – Continuous

Operating and Storage Junction Temperature Range

-500

°C

T , T

-55 to +150

STG

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3. All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

T = 25°C unless otherwise noted.

Max

Characteristic

Symbol MPSA56

*MMBTA56 **PZTA56

Units

Total Device Dissipation,

Derate above 25°C

625

5.0

350

2.8

1,000

8.0

mW/°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."

83.3

200

°C/W

θJC

357

125

θJA

**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm .

Packages

MPSA56

MMBTA56

PZTA56

TO-92

SOT-23

Mark: 2G

SOT-223

MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

www.fairchildsemi.com

12 3 4 5 6 7...15

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