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MPSA56

更新时间: 2024-11-03 22:51:11
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描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

MPSA56 数据手册

  
PNP SILICON PLANAR  
MPSA56  
MEDIUM POWER TRANSISTOR  
ISSUE 2 – FEB 94  
FEATURES  
*
*
80 Volt VCEO  
Gain of 50 at IC=100mA  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
-80  
-80  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-4  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
-500  
mA  
mW  
°C  
Ptot  
750  
Tj:Tstg  
-55 to +175  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-80  
-80  
-4  
V
IC=-100µA, IE=0  
IC=-1mA, IB=0*  
IE=-100µA, IC=0  
Collector-Emitter  
Breakdown Voltage  
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
-0.1  
-0.1  
-0.25  
-1.2  
VCB=-80V, IE=0  
µA  
µA  
V
Collector Cut-Off  
Current  
ICES  
VCE=-60V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
IC=-100mA, IB=-10mA*  
IC=-100mA, VCE=-1V*  
Base-Emitter  
Turn-On Voltage  
VBE(on)  
V
Static Forward Current hFE  
Transfer Ratio  
50  
50  
IC=-10mA, VCE=1V*  
IC=-100mA, VCE=1V*  
Transition  
Frequency  
fT  
100  
MHz  
IC=-10mA, VCE=-2V  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-81  

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