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MPSA43 PDF预览

MPSA43

更新时间: 2024-11-03 12:20:07
品牌 Logo 应用领域
WEITRON 晶体晶体管开关
页数 文件大小 规格书
3页 426K
描述
High-Voltage NPN Transistors

MPSA43 数据手册

 浏览型号MPSA43的Datasheet PDF文件第2页浏览型号MPSA43的Datasheet PDF文件第3页 
MPSA43  
High-Voltage NPN Transistors  
1. EMITTER  
2. BASE  
3. COLLECTOR  
P b  
Lead(Pb)-Free  
1
2
3
TO-92  
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
Value  
200  
200  
V
CEO  
V
CBO  
V
6.0  
500  
EBO  
I
C
P
0.625  
150  
Total Device Dissipation T =25°C  
W
°C  
°C  
A
D
Junction Temperature  
Storage Temperature  
T
j
-55 to +150  
Tstg  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)  
V
V
200  
Vdc  
C
B
(BR)CEO  
(BR)CBO  
-
-
200  
Vdc  
Vdc  
Collector-Base Breakdown Voltage (I = 100 uAdc, I =0)  
C
E
V
6.0  
-
Emitter-Base Breakdown Voltage (I = 100 uAdc, I =0)  
(BR)EBO  
E
C
I
Collector Cutoff Current (V = 160Vdc, I =0)  
0.1  
0.1  
µA  
µA  
CBO  
CB  
E
d
Emitter Cutoff Current (V = 4.0V c, I =0)  
I
EB  
C
-
EBO  
WEITRON  
http://www.weitron.com.tw  
1/3  
29-Mar-06  

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