Datasheet > MPSA42B2

MPSA42B2

更新时间： 2024-11-04 07:03:31

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WEITRON		/
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描述
Transistor

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MPSA42B2 数据手册

MPSA42

General Purpose Transistors

NPN Silicon

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

310

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

305

Collector Current -Continuous

500

Junction and Storage Temperature

Thermal Resistance, junction to Ambient

Thermal Resistance, unction to Case

T_J, T_stg

-55-150

200

℃

℃/mW

R_Ө

83.3

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

310

305

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOIc=100uA, I_E=0

V_(BR)CEOIc=1mA, I_B=0

V_(BR)EBOI_E=100µA, I_C=0

I_CBO

I_EBO

V_CB=200V, I_E=0

V_EB=5V, I_C=0

0.25

0.1

µA

Emitter cut-off current

h_FE(1)

V_CE=10V, I_C=1mA

DC current gain

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V, I_C=10mA

V_CE=10V, I_C=30mA

I_C=20mA, I_B=2mA

250

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

0.2

0.9

I_C=20mA, I_B=2mA

V_CE=20V, I_C=10mA,f=30MH_Z

MHz

CLASSIFICATION OF h_FE(2)

Rank

B₁

B₂

150-200

Range

80-100

100-150

200-250

WEITRON

http://www.weitron.com.tw

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