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MPSA27 PDF预览

MPSA27

更新时间: 2024-11-27 22:51:11
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KEC 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
2页 68K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (DARLINGTON TRANSISTOR)

MPSA27 数据手册

 浏览型号MPSA27的Datasheet PDF文件第2页 
SEMICONDUCTOR  
MPSA27  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
DARLINGTON TRANSISTOR  
B
C
FEATURES  
Complementary to MPSA77.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
1.00  
1.27  
E
K
D
G
MAXIMUM RATINGS (Ta=25)  
F
G
H
J
K
L
0.85  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
RATING  
60  
UNIT  
V
0.45  
_
H
14.00 +0.50  
VCBO  
VCES  
VEBO  
IC  
0.55 MAX  
2.30  
0.45 MAX  
1.00  
F
F
M
60  
V
N
3
1
2
10  
V
1. EMITTER  
2. BASE  
3. COLLECTOR  
Collector Current  
500  
mA  
mW  
PC  
Collector Power Dissipation  
Junction Temperature  
625  
Tj  
150  
TO-92  
Tstg  
Storage Temperature Range  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC SYMBOL  
Collector Cut-off Current  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
ICBO  
VCE=50V, IE=0  
-
-
-
-
-
-
-
-
-
-
100  
nA  
nA  
V
IEBO  
VEB=10V, IB=0  
Emitter Cut-off Current  
100  
V(BR)CES  
V(BR)CBO  
hFE(1) *  
hFE(2) *  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
IC=100A, IE=0  
60  
60  
10K  
10K  
-
-
-
IC=100A, IE=0  
V
VCE=5V, IC=10mA  
VCE=5V, IC=100mA  
IC=100mA, IB=0.1mA  
VCE=5V, IC=100mA  
-
DC Current Gain  
-
VCE(sat)  
VBE  
*
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
1.5  
2
V
V
*
-
* Pulse Test : PW300S, Duty Cycle2%.  
2002. 2. 20  
Revision No : 1  
1/2  

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