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MPSA27

更新时间： 2024-11-27 22:51:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 46K
描述
NPN General Purpose Amplifier

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MPSA27 数据手册

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MPSA27/PZTA27  
NPN General Purpose Amplifier  
4
•
This device is designed for applications requiring  
extremely high current gain at collector currents to  
500mA.  
Sourced from process 03.  
3
2
•
•
1
SOT-223  
TO-92  
1. Emitter 2. Base 3. Collector  
See MPSA28 for characteristics.  
1
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector current  
60  
60  
CES  
V
CBO  
EBO  
10  
V
I
- Continuous  
800  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature  
-55 ~ +150  
J
stg  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 100µA, V = 0  
60  
60  
10  
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
CBO  
C
C
C
BE  
= 10µA, I = 0  
C
= 100µA, I = 0  
C
I
I
I
V
V
V
= 50V, I = 0  
100  
500  
100  
nA  
nA  
nA  
CB  
CE  
EB  
E
Collector Cutoff Current  
= 50V, V = 0  
BE  
CES  
Emitter Cutoff Current  
= 10V, I = 0  
C
EBO  
On Characteristics  
h
DC Current Gain  
I
I
= 10mA, V = 5.0V  
10000  
10000  
FE  
C
C
CE  
= 100mA, V = 5.0V  
CE  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= 100mA, I = 0.1mA  
1.5  
2.0  
V
V
CE(sat)  
C
B
= 100mA, V = 5.0V  
BE(on)  
C
CE  
Small Signal Characteristics  
Current Gain Bandwidth Product  
f
I
= 10mA, V = 5.0V,  
125  
MHz  
T
C
CE  
f = 100MHz  
Thermal Characteristics T =25°C unless otherwise noted  
A
Max.  
Symbol  
Parameter  
Units  
mW  
MPSA27  
*PZTA27  
P
Total Device Dissipation  
625  
5.0  
1000  
8.0  
D
Derate above 25°C  
mW/°C  
R
R
Thermal Resistance, Junction to Case  
83.3  
200  
°C/W  
θJC  
θJA  
Thermal Resistance, Junction to Ambient  
125  
°C/W  
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm: mounting pad for the collector lead min. 6cm.  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, June 2002  
1234

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