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MPSA20 PDF预览

MPSA20

更新时间: 2024-09-15 20:34:07
品牌 Logo 应用领域
CENTRAL 晶体管
页数 文件大小 规格书
2页 325K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

MPSA20 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

MPSA20 数据手册

 浏览型号MPSA20的Datasheet PDF文件第2页 
MPSA20 NPN  
MPSA70 PNP  
www.centralsemi.com  
COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MPSA20 and  
MPSA70 are complementary silicon transistors  
designed for general purpose amplifier and switching  
applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Emitter Voltage  
SYMBOL  
UNITS  
V
A
V
40  
4.0  
CEO  
EBO  
Emitter-Base Voltage  
V
V
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation  
I
100  
C
P
625  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
=30V  
MIN  
MAX  
100  
UNITS  
nA  
I
V
CBO  
CB  
I =1.0mA  
BV  
40  
V
V
V
CEO  
EBO  
C
BV  
I =100μA  
4.0  
E
V
I =10mA, I =1.0mA  
0.25  
400  
CE(SAT)  
FE  
C
B
h
V
=10V, I =5.0mA  
40  
CE  
CE  
CB  
C
f
V
V
=10V, I =5.0mA, f=100MHz  
125  
MHz  
pF  
T
C
C
=10V, I =0, f=100kHz  
4.0  
ob  
E
R1 (18-March 2014)  

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