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MPSA17ZL1 PDF预览

MPSA17ZL1

更新时间: 2024-11-05 19:44:55
品牌 Logo 应用领域
安森美 - ONSEMI 斩波器晶体管
页数 文件大小 规格书
34页 304K
描述
100mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

MPSA17ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.49其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:CHOPPER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

MPSA17ZL1 数据手册

 浏览型号MPSA17ZL1的Datasheet PDF文件第2页浏览型号MPSA17ZL1的Datasheet PDF文件第3页浏览型号MPSA17ZL1的Datasheet PDF文件第4页浏览型号MPSA17ZL1的Datasheet PDF文件第5页浏览型号MPSA17ZL1的Datasheet PDF文件第6页浏览型号MPSA17ZL1的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
MAXIMUM RATINGS  
1
2
3
Rating  
CollectorEmitter Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
V
40  
15  
CEO  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Vdc  
EBO  
Collector Current – Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
40  
15  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
EmitterBase Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
V
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
100  
100  
nAdc  
nAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
E
I
EBO  
EB  
C
Preferred devices are Motorola recommended choices for future use and best overall value.  
(Replaces MPSA16/D)  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–629  

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