Datasheet > MPSA17

MPSA17

更新时间： 2024-09-24 14:55:19

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	877K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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MPSA17 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	40
Collector Current - Continuous：	0.1	DC current gain - Min：	200
DC current gain - Max：	800	Transition frequency：	80
Package：	TO-92	Storage Temperature Range：	-55-150
class：	Transistors

MPSA17 数据手册

MPSA17

TO-92 Transistor (NPN)

TO-92

1. EMITTER

BASE

3. COLLECTOR

Features

High V_(BR)EBO: 12V

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Ease Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.1

Dimensions in inches and (millimeters)

P_C

300

T_j

150

℃

T_stg

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

MAX

UNIT

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 1mA, I_E=0

I_E= 100μA, I_C=0

V_CB=30V, I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=10V, I_C=0

DC current gain

h_FE

V_CE=10V, I_C=5mA

I_C= 10mA, I_B=1mA

200

800

0.25

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

V_CE=10V,I_C=5mA,f=100MHz

MHz

f_T

Collector output capacitance

C_ob

V_CB=10V,I_E=0,f=1MHz

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Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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