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MPSA13D27Z PDF预览

MPSA13D27Z

更新时间: 2024-09-16 20:09:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
13页 843K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

MPSA13D27Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.05最大集电极电流 (IC):1.2 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzBase Number Matches:1

MPSA13D27Z 数据手册

 浏览型号MPSA13D27Z的Datasheet PDF文件第2页浏览型号MPSA13D27Z的Datasheet PDF文件第3页浏览型号MPSA13D27Z的Datasheet PDF文件第4页浏览型号MPSA13D27Z的Datasheet PDF文件第5页浏览型号MPSA13D27Z的Datasheet PDF文件第6页浏览型号MPSA13D27Z的Datasheet PDF文件第7页 
MPSA13  
MMBTA13  
PZTA13  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 1M  
B
SOT-223  
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at collector currents to 1.0 A. Sourced from  
Process 05. See MPSA14 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
V
V
30  
10  
V
Collector Current - Continuous  
1.2  
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA13  
*MMBTA13  
**PZTA13  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
ã 1997 Fairchild Semiconductor Corporation  

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