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MPSA06

更新时间: 2024-11-18 22:51:11
品牌 Logo 应用领域
KEC 晶体放大器晶体管驱动局域网
页数 文件大小 规格书
1页 60K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER)

MPSA06 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.04
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MPSA06 数据手册

  
SEMICONDUCTOR  
MPSA06  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
DRIVER STAGE AMPLIFIER APPLICATIONS.  
VOLTAGE AMPLIFIER APPLICATIONS.  
B
C
FEATURES  
Complementary to MPSA56.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
1.00  
1.27  
E
K
D
G
MAXIMUM RATING (Ta=25)  
F
G
H
J
K
L
0.85  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
80  
UNIT  
V
0.45  
_
H
14.00 +0.50  
0.55 MAX  
2.30  
0.45 MAX  
1.00  
F
F
M
80  
V
N
3
1
2
6
V
1. EMITTER  
2. BASE  
3. COLLECTOR  
500  
mA  
mA  
mW  
IE  
Emitter Current  
-500  
625  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
TO-92  
Tj  
150  
Tstg  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
VCB=80V, IE=0  
Collector Cut-off Current  
ICEO  
-
-
-
-
-
-
-
-
-
-
100  
nA  
nA  
V
VCE=60V, IB=0  
Emitter Cut-off Current  
100  
V(BR)CEO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
IC=1mA, IB=0  
Collector-Emitter Breakdown Voltage  
80  
100  
100  
-
-
VCE=1V, IC=10mA  
VCE=1V, IC=100mA  
IC=100mA, IB=10mA  
VCE=1V, IC=100mA  
VCE=2V, IC=10mA  
-
-
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
0.25  
1.2  
-
V
V
-
fT  
Transition Frequency  
100  
MHz  
1999. 11. 30  
Revision No : 3  
1/1  

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