Datasheet > MPSA06

MPSA06

更新时间： 2024-11-19 18:09:35

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	783K
描述
MPSA06\| NPN Transistor 80V 500mA 625mW TO-92

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数据手册

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MPSA06 数据手册

NPN Transistor

80V 625mW TO-92

MPSA06

FEATURE

•

Collector-emitter Voltage V_CE=80V

Collector current: 500mA

Application: Signal Processing, Switching, Amplification

MECHANICAL DATA

•

Case: TO-92, molded plastic

Terminals: Solderable per MIL-STD-750, Method 2026

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

4.0

Collector Continuous Current

Power Dissipation

500

ºC

P_D

625

Junction Temperature

Storage Temperature Range

T_J

150

T_STG

-55 ~ +150

ELECTRICAL CHARACTERISTICS

Parameter

Conditions

Symbol

h_FE

Min.

100

Max.

Unit

V_CE=1V, I_C=10mA

V_CE=1V, I_C=100mA

V_CB=80V

DC Current Gain

100

Collector Base Cutoff Current

I_CBO

I_CES

Collector Emitter Cutoff Current

Collector Base Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

V_CE=60V

I_C=1mA

V_(BR)CBO

V_(BR)EBO

V _CE(sat)

V _BE(on)

f_T

4.0

I_E=100µA

I_C=-100mA, I_B=-10mA

V_CE=1V, I_C=100mA

V_CE=2V, I_C=10mA

0.25

1.20

Transition Frequency at 100MHz

100

MHz

Note: TA=25°C, unless otherwise noted.

Rev. 3c 04/01/24

Meritek Electronics Corporation | www.meritekusa.com

12 3

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