Datasheet > MPS6518J18Z

MPS6518J18Z

更新时间： 2024-11-09 10:13:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
7页	292K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

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MPS6518J18Z 数据手册

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Tech n ologies

MPS6518

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 100 mA. Sourced

from Process 66. See 2N3906 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

4.0

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPS6518

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

R_θ

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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