5秒后页面跳转
MPS6518 PDF预览

MPS6518

更新时间: 2024-11-07 22:46:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
2页 25K
描述
PNP General Purpose Amplifier

MPS6518 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.13
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):90
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

MPS6518 数据手册

 浏览型号MPS6518的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MPS6518  
TO-92  
C
B
E
PNP General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 100 mA. Sourced  
from Process 66. See 2N3906 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
4.0  
V
V
Emitter-Base Voltage  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPS6518  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

MPS6518 替代型号

型号 品牌 替代类型 描述 数据表
2N4400TF FAIRCHILD

功能相似

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2N3859A FAIRCHILD

功能相似

NPN General Purpose Amplifier

与MPS6518相关器件

型号 品牌 获取价格 描述 数据表
MPS6518(OPTION18) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPS6518/D10Z TI

获取价格

100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6518/D10Z(OPTION18) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPS6518/D10Z{OPTION18} TI

获取价格

100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6518/D11Z TI

获取价格

100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6518/D11Z(OPTION18) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MPS6518/D11Z{OPTION18} TI

获取价格

100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6518/D11Z{OPTION5} TI

获取价格

100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6518/D26Z TI

获取价格

100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6518/D26Z(OPTION18) TI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92