Datasheet > MPS4250_10

MPS4250_10

更新时间： 2024-11-26 10:48:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	78K
描述
PNP Silicon Transistor

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中文翻译

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数据手册

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MPS4250_10 数据手册

MPS4250

Transistor

PNP Silicon

Features

• This is a Pb−Free Device*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

−40

Unit

Vdc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

CEO

BASE

−40

Vdc

CES

CBO

EBO

−40

Vdc

EMITTER

−5.0

−50

Vdc

mAdc

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

TO−92 1 WATT

(TO−226)

CASE 29−10

STYLE 1

Derate above 25°C

mW/°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

MARKING DIAGRAM

83.3

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MPS

4250

AYWW G

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

5000 / Tape & Reel

MPS4250G

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

August, 2010 − Rev. 5

MPS4250/D

12 3

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