MPS4126RLRA

更新时间： 2024-11-26 04:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
3页	43K
描述
Amplifier Transistor PNP Silicon

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中文翻译

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数据手册

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MPS4126RLRA 数据手册

MPS4124

Amplifier Transistor

NPN Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Symbol

Value

Unit

Vdc

BASE

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

200

mAdc

EMITTER

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

TO−92

CASE 29−11

STYLE 1

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

200

°C/W

MARKING DIAGRAM

Thermal Resistance, Junction−to−Case

83.3

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MPS

4124

AYWW G

MPS4124 = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

MPS4124

TO−92

5000 Units/Box

MPS4124G

TO−92

(Pb−Free)

MPS4124RLRA

TO−92

2000/Tape & Reel

MPS4124RLRAG

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

MPS4124/D

12 3

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