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MPS4126RL PDF预览

MPS4126RL

更新时间: 2024-11-26 13:11:47
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安森美 - ONSEMI 晶体放大器小信号双极晶体管
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4页 62K
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MPS4126RL 数据手册

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Order this document  
by MPS4126/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
Symbol  
Value  
Unit  
Vdc  
V
CE  
V
CB  
V
EB  
–25  
–25  
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
–4.0  
–200  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
Vdc  
Vdc  
(BR)CEO  
(I = –1.0 mA, I = 0)  
–25  
–25  
–4.0  
C
B
CollectorBase Breakdown Voltage  
(I = –10 A, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 0, I = –10 A)  
V
Vdc  
(BR)EBO  
C
E
Collector Cutoff Current  
(V = –20 V, I = 0)  
I
nAdc  
nAdc  
CBO  
–50  
–50  
CB  
Emitter Cutoff Current  
(V = –3.0 V, I = 0)  
E
I
EBO  
EB  
C
(Replaces MPS4125/D)  
Motorola, Inc. 1997

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