MPS4125RLRE

更新时间： 2024-11-26 13:11:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
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4页	77K
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MPS4125RLRE 数据手册

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol MPS4125 MPS4126

Unit

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

–30

–10

–25

Vdc

–4.0

Vdc

Collector Current — Continuous

–200

mAdc

Total Power Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Power Dissipation @ T = 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –1.0 mA, I = 0)

MPS4125

MPS4126

–30

–25

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = –10 A, I = 0)

MPS4125

MPS4126

–30

–25

—

(BR)CBO

Emitter–Base Breakdown Voltage (I = 0, I = –10 A)

(BR)EBO

–4.0

—

Vdc

nAdc

Collector Cutoff Current (V

= –20 V, I = 0)

–50

CBO

Emitter Cutoff Current (V

= –3.0 V, I = 0)

—

EBO

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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MPS4126RL	ONSEMI	获取价格	暂无描述
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