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MPS4124RLRAG PDF预览

MPS4124RLRAG

更新时间: 2024-11-26 04:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
3页 43K
描述
Amplifier Transistor NPN Silicon

MPS4124RLRAG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:PLASTIC, TO-226, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:1 week
风险等级:5.41Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):60
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
Base Number Matches:1

MPS4124RLRAG 数据手册

 浏览型号MPS4124RLRAG的Datasheet PDF文件第2页浏览型号MPS4124RLRAG的Datasheet PDF文件第3页 
MPS4124  
Amplifier Transistor  
NPN Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
V
2
CE  
BASE  
V
30  
CB  
EB  
EmitterBase Voltage  
V
5.0  
Vdc  
1
Collector Current − Continuous  
I
200  
mAdc  
C
EMITTER  
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
W
mW/°C  
A
D
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
TO−92  
CASE 29−11  
STYLE 1  
J
stg  
1
2
THERMAL CHARACTERISTICS  
3
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
R
200  
°C/W  
q
JA  
JC  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Case  
R
q
83.3  
°C/W  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MPS  
4124  
AYWW G  
G
MPS4124 = Device Code  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPS4124  
TO−92  
5000 Units/Box  
5000 Units/Box  
MPS4124G  
TO−92  
(Pb−Free)  
MPS4124RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
MPS4124RLRAG  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 3  
MPS4124/D  

MPS4124RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
MPS4124RLRA ONSEMI

完全替代

Amplifier Transistor NPN Silicon
MPS4124G ONSEMI

完全替代

Amplifier Transistor NPN Silicon
MPS4124 ONSEMI

完全替代

Amplifier Transistor(NPN Silicon)

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