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MPS404 PDF预览

MPS404

更新时间: 2024-11-27 22:46:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 244K
描述
Chopper Transistor

MPS404 数据手册

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Order this document  
by MPS404A/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
Motorola Preferred Device  
2
BASE  
1
EMITTER  
MAXIMUM RATINGS  
1
2
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
–35  
Unit  
Vdc  
3
V
CEO  
V
CBO  
V
EBO  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
–40  
Vdc  
–25  
Vdc  
Collector Current — Continuous  
I
C
–150  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
(1)  
R
JA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
83.3  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(2)  
CollectorEmitter Breakdown Voltage  
(I = –10 mAdc, I = 0)  
V
V
–35  
–40  
–25  
Vdc  
Vdc  
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = –10 Vdc, I = 0)  
I
–100  
–100  
nAdc  
nAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = –10 Vdc, I = 0)  
E
I
EBO  
BE  
C
2. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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