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MPS3904 PDF预览

MPS3904

更新时间: 2024-11-24 22:46:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 299K
描述
General Purpose Transistor(NPN Silicon)

MPS3904 数据手册

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Order this document  
by MPS3904/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
40  
60  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Vdc  
6.0  
100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Power Dissipation @ T = 60°C  
P
P
450  
mW  
A
D
Total Device Dissipation @ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
V
40  
60  
6.0  
50  
50  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 10 µAdc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 µAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
I
nAdc  
nAdc  
CEX  
(V  
= 30 Vdc, V  
= 3.0 Vdc)  
= 3.0 Vdc)  
CE  
EB(off)  
Base Cutoff Current  
(V = 30 Vdc, V  
I
BL  
CE  
EB(off)  
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.  
REV 1  
Motorola, Inc. 1997

MPS3904 替代型号

型号 品牌 替代类型 描述 数据表
BC338-40 DIOTEC

类似代替

Si-Epitaxial PlanarTransistors
BC338-16 DIOTEC

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Si-Epitaxial PlanarTransistors
MPSW42 ONSEMI

类似代替

One Watt High Voltage Transistor(NPN Silicon)

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暂无描述
MPS3904RLRB MOTOROLA

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Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92