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MP6KE82CAE3 PDF预览

MP6KE82CAE3

更新时间: 2024-11-19 18:44:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 470K
描述
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

MP6KE82CAE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.53其他特性:HIGH RELIABILITY
最大击穿电压:86.1 V最小击穿电压:77.9 V
击穿电压标称值:82 V外壳连接:ISOLATED
最大钳位电压:113 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.47 W
认证状态:Not Qualified最大重复峰值反向电压:70.1 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MP6KE82CAE3 数据手册

 浏览型号MP6KE82CAE3的Datasheet PDF文件第2页浏览型号MP6KE82CAE3的Datasheet PDF文件第3页浏览型号MP6KE82CAE3的Datasheet PDF文件第4页浏览型号MP6KE82CAE3的Datasheet PDF文件第5页浏览型号MP6KE82CAE3的Datasheet PDF文件第6页 

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