是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.43 | 其他特性: | HIGH RELIABILITY |
最大击穿电压: | 8.61 V | 最小击穿电压: | 7.79 V |
击穿电压标称值: | 8.2 V | 外壳连接: | ISOLATED |
最大钳位电压: | 12.1 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.47 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 7.02 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MP6KE8.2CATR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, T-18, 2 PIN | |
MP6KE82A | MICROSEMI |
获取价格 |
600W Transient Voltage Suppressor | |
MP6KE82A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MP6KE82AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MP6KE82AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MP6KE82AE3TR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN | |
MP6KE82ATR | MICROSEMI |
获取价格 |
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, T-18, 2 PIN | |
MP6KE82CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MP6KE82CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MP6KE82CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH |