Datasheet > MP4410_07

MP4410_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关脉冲
页数	文件大小	规格书
4页	133K
描述
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

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MP4410_07 数据手册

MP4410

TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L²-π-MOSV in One)

MP4410

High Power, High Speed Switching Applications

Industrial Applications

Unit: mm

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

•

4-V gate drivability

Small package by full molding (SIP 12 pin)

High drain power dissipation (4-device operation)

: P = 28 W (Tc = 25°C)

•

Low drain-source ON resistance: R

= 0.12 Ω (typ.)

DS (ON)

Low leakage current: I

= ±10 μA (max) (V

= ±16 V)

= 60 V)

GSS

DSS

= 100 μA (max) (V

•

Enhancement-mode: V = 0.8 to 2.0 V (I = 1 mA)

th D

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

JEDEC

JEITA

―

±20

DSS

Gate-source voltage

Drain current

GSS

TOSHIBA

2-32C1D

Peak drain current

Drain power dissipation

(1-device operation)

Weight: 3.9 g (typ.)

2.2

Ta = 25°C

Tc = 25°C

4.4

Drain power dissipation

(4-device operation)

Channel temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Array Configuration

2006-10-27

12 3 4

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