是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.81 | Is Samacsys: | N |
最大直流栅极触发电流: | 150 mA | 最大直流栅极触发电压: | 3 V |
快速连接描述: | G | 螺丝端子的描述: | A-K-AK |
最大漏电流: | 30 mA | 通态非重复峰值电流: | 10600 A |
最大通态电压: | 1.42 V | 最大通态电流: | 352000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
重复峰值反向电压: | 800 V | 子类别: | Silicon Controlled Rectifiers |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MP03HBN360-10 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 352000mA I(T), 1000V V(RRM), | |
MP03HBN360-10 | DYNEX |
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Dual Thyristor, Thyristor/Diode Module | |
MP03HBN360-12 | DYNEX |
获取价格 |
Dual Thyristor, Thyristor/Diode Module | |
MP03HBN360-12 | MICROSEMI |
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Silicon Controlled Rectifier, 352000mA I(T), 1200V V(RRM), | |
MP03HBN360-14 | DYNEX |
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Dual Thyristor, Thyristor/Diode Module | |
MP03HBN360-16 | DYNEX |
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Dual Thyristor, Thyristor/Diode Module | |
MP03HBN360-18 | DYNEX |
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Dual Thyristor, Thyristor/Diode Module | |
MP03HBP130-16 | MICROSEMI |
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Silicon Controlled Rectifier, 134000mA I(T), 1600V V(RRM), | |
MP03HBP130-18 | DYNEX |
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Silicon Controlled Rectifier, 210A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, MP03, 5 | |
MP03HBP130-18 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 134000mA I(T), 1800V V(RRM), |