Datasheet > MP03HBN275-20

MP03HBN275-20

更新时间： 2024-09-25 04:47:51

品牌	Logo	应用领域
DYNEX		/
页数	文件大小	规格书
10页	112K
描述
Silicon Controlled Rectifier, 430A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element

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MP03HBN275-20 数据手册

MP03 XXX 275 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS4481-4.0

DS4481-5.0 January 2000

FEATURES

KEY PARAMETERS

V_DRM

I_TSM

I_T(AV)(per arm)

V_isol

2200V

8100A

277A

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

2500V

CIRCUIT OPTIONS

Code

Circuit

HBT

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

HBP

HBN

■ AC Phase Control

PACKAGE OUTLINE

VOLTAGE RATINGS

Conditions

Type

Number

Repetitive

Peak

Voltages

V_DRMV_RRM

2200

2000

1800

1600

MP03/275 - 22

MP03/275 - 20

MP03/275 - 18

MP03/275 - 16

T_(vj)= 125^oC

I_DRM= I_RRM= 30mA

V_DSM& V_RSM

V_DRM& V_RRM+ 100V

respectively

Lower voltage grades available.

For full description of part number see "Ordering instructions"

on page 3.

Module type code: MP03.

See Package Details for further information.

CURRENT RATINGS - PER ARM

Symbol

Parameter

Conditions

Max.

277

234

216

Units

T_case= 75^oC

T_case= 85^oC

_heatsink= 75^oC

T_heatsink= 85^oC

Mean on-state current

RMS value

Halfwave, resistive load

T_case= 75^oC

I_T(AV)

181

430

I_T(RMS)

1/10

12 3 4 5 6 7...10

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