MRF1511T1

更新时间： 2024-02-21 10:53:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管放大器
页数	文件大小	规格书
12页	501K
描述
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

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技术参数
数据手册

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MRF1511T1 技术参数

生命周期：	Transferred	包装说明：	CHIP CARRIER, R-PQCC-N4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.13
Is Samacsys：	N	配置：	SINGLE
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	VERY HIGH FREQUENCY BAND
JESD-30 代码：	R-PQCC-N4	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	QUAD
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF1511T1 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF1511/D

The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFET

The MRF1511T1 is designed for broadband commercial and industrial

applications at frequencies to 175 MHz. The high gain and broadband

performance of this device makes it ideal for large–signal, common source

amplifier applications in 7.5 volt portable FM equipment.

ꢁ

• Specified Performance @ 175 MHz, 7.5 Volts

175 MHz, 8 W, 7.5 V

Output Power — 8 Watts

Power Gain — 11.5 dB

Efficiency — 55%

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,

175 MHz, 2 dB Overdrive

• Excellent Thermal Stability

ꢀ

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

• Broadband UHF/VHF Demonstration Amplifier Information

Available Upon Request

ꢂ

CASE 466–02, STYLE 1

(PLD–1.5)

• RF Power Plastic Surface Mount Package

• Available in Tape and Reel.

PLASTIC

T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Drain–Source Voltage

Gate–Source Voltage

DSS

Drain Current — Continuous

Total Device Dissipation @ T = 25°C (1)

Derate above 25°C

62.5

0.5

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +150

150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

°C/W

J –

(1) Calculated based on the formula P

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

MOTOROLA RF DEVICE DATA

MRF1511T1

 Motorola, Inc. 2002

12 3 4 5 6 7...12

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