ꢏ ꢐꢑ ꢐ ꢒꢐ ꢇꢉ
SEMICONDUCTOR TECHNICAL DATA
Order this document
by CA5800C/D
The RF Line
ꢀꢁ ꢂ ꢃꢄꢅꢆꢂ ꢇꢁꢆꢃ ꢅꢈ ꢉ ꢊꢋ ꢌꢁꢍꢁꢃ ꢈ ꢎ
. . . designed for amplifier applications in 50 to 100 ohm systems requiring
wide bandwidth, low noise and low distortion. This hybrid provides excellent
gain stability with temperature and linear amplification as a result of the
push–pull circuit design.
ꢓꢉ ꢔ ꢕꢖ ꢖꢓ
ꢓꢉ ꢔ ꢕꢖ ꢖꢓ ꢗ
15 dB
• Specified Characteristics at VCC = 28 V, TC = 25°C:
Frequency Range — 10 to 1000 MHz
10–1000 MHz
1 WATT
WIDEBAND
Output Power — 1 W Typ @ 1 dB Compression, f = 900 MHz
Power Gain — 15.5 Typ @ f = 1000 MHz
LINEAR AMPLIFIERS
Noise Figure — 7.5 dB Typ @ f = 500 MHz
ITO — 40.5 dBm @ f = 1000 MHz
• All Gold Metallization for Improved Reliability
• Optimized for 28 V Operation
CASE 714P–03, STYLE 2
(CA)
CA5800C
MAXIMUM RATINGS
Rating
Symbol
Value
32
Unit
Vdc
dBm
°C
DC Supply Voltage
RF Power Input
V
CC
P
+18
in
C
CASE 714T–03, STYLE 1
CA5800CS
Operating Case Temperature Range
Storage Temperature Range
T
–20 to +100
–40 to +100
T
stg
°C
ELECTRICAL CHARACTERISTICS (T = 25°C, V = 28 V, 50 Ω system unless otherwise noted)
C
CC
Characteristic
Frequency Range (3 dB Down at 10 MHz)
Gain Flatness (f = 40–1000 MHz)
Power Gain (f = 1000 MHz)
Symbol
BW
Min
10
Typ
—
Max
1000
2
Unit
MHz
dB
—
—
1
P
G
14.5
15.5
—
dB
Noise Figure, Broadband
f = 500 MHz
f = 1000 MHz
NF
—
—
7.5
8.5
8.5
9.5
dB
Power Output — 1 dB Compression (f = 900 MHz)
Third Order Intercept (See Figure 1, f = 10–1000 MHz)
P
800
—
1000
40.5
—
—
mW
dBm
—
o 1dB
ITO
1
Input/Output VSWR
f = 40–900 MHz
VSWR
—
—
—
—
2:1
2.6:1
f = 900–1000 MHz
Second Harmonic Distortion (P = 100 mW, f = 1000 MHz)
d
—
360
—
–55
400
–58
–45
440
—
dB
mA
dB
o
2H
so
Supply Current
Intermodulation Distortion, 3 Tone
I
CC
IMD
(Vision Carrier = –8 dB, Sound Carrier = –10 dB,
Sideband Signal = –17 dB. See Figure 2.
f = 860 MHz, P
= 200 mW)
sync
Second Order IMD
(P = 2.75 dBm, f = 373 MHz, f = 450 MHz, See Figure 1)
IM2
–65
–60
dB
t
1
2
MOTOROLA RF DEVICE DATA
CA5800C CA5800CS
1
Motorola, Inc. 1994